PA05SPECIFICATIONS Unless otherwise noted: TC = 25°C, CC = 470pF, RC = 120 Ω. DC input specifications are ± value given. Power supply voltage is typical rating. ±VB = ±VS. ABSOLUTE MAXIMUM RATINGSParameterSymbolMinMaxUnits Supply Voltage, total +Vs to -Vs 100 V Boost Voltage ±VB -Vs - 20 +Vs + 20 V Output Current, continuous within SOA IOUT 30 A Power Dissipation, internal PD 250 W Input Voltage, differential VIN (Diff) -20 20 V Input Voltage, common mode VCM -VB VB V Temperature, pin solder, 10s 350 °C Temperature, junction 1 TJ 175 °C Temperature, storage -65 +150 °C Operating Temperature Range, case Tc -55 +125 °C 1. Long term operation at the maximum junction temperature wil result in reduced product life. Derate internal power dis- sipation to achieve high MTTF. For guidance, refer to the heatsink data sheet. The PA05 is constructed from MOSFET transistors. ESD handling procedures must be observed. CAUTION The internal substrate contains beryl ia (BeO). Do not break the seal. If accidental y broken, do not crush, machine, or subject to temperatures in excess of 850°C to avoid generating toxic fumes. 4 PA05U Rev O Document Outline PA05 Features Applications Description Figure 1: Equivalent Schematic Typical Connection Figure 2: Typical Connections Pinout and Description Table Figure 3: External Connections Specifications Absolute Maximum Ratings Input Gain Output Power Supply Thermal Typical Performance Graphs SAFE OPERATING AREA (SOA) 1. The current handling capability of the MOSFET geometry and the wire bonds. 2. The junction temperature of the output MOSFETs. Figure 16: SOA General Typical Application Figure 17: Typical Application Phase Compensation Current Limit Figure 18: Current Limit Shutdown Operation Figure 19: Shutdown Operation Boost Operation Compensation Package Design Package Style CR
